- February 1, 2008
Salem, MA -- Crystal Systems, Inc, (CSI) announces funding in the amount of $250,000 for its Extreme Intensity Ti:Sa Amplifier Crystals. The funding is provided by the FRENCH INSTITUTE DE LA LUMIERE EXTREME (ILE) project. The funding will be used to scale-up the Heat Exchange Method, (HEM), process of crystal growth from its current size of 6” diameter to 8” diameter. CSI will be manufacturing the worlds most powerful set of amplifier crystals which will power a laser facility projected to be 1000 times more powerful than today’s most powerful lasers.
Kurt Schmid, Chief Operating Officer states that, “This project aligns perfectly with our strategic goal of being the number one producers of large size and high quality Ti:Sapphire crystals. We have designed upgrades to our furnace that will allow us to control the crystal growth variables tighter than we ever thought possible. These upgrades along with our crystal growth IP will allow us to produce 200 mm diameter crystals”
Crystal Systems will enable the high power laser community with the introduction of the first 150 mm diameter and 200 mm diameter titanium doped sapphire crystals. The crystals are expected to exhibit the superior quality of their current 100 mm amplifier crystals. Crystal Systems has recently made investment into upgraded homogeneity testing and FOM measurement capabilities. The company expects to continue to outpace the competition in the High Quality Laser Crystal Area.
Crystal Systems Inc has been supplying crystals for Industrial, Semiconductor, Defense and Medical Applications for over 35 years. The company’s primary manufacturing facility is located North of Boston in Salem, Massachusetts.
For more information about Titanium doped sapphire OR OTHER COMPANY NEWS, contact Kurt Schmid at (978) 745-0088, (US) or by e-mail at: Sales@crystalsystems.com
