The Heat Exchanger Method (HEM) was a breakthrough in crystal growth technology. The company is continually optimizing HEM to commercially produce the highest quality sapphire and Ti:sapphire crystals. It has adapted HEM to produce crystals of other materials.

R&D emphasis is on developing the Heat Exchanger Method (HEM) for growth of 25-inch diameter sapphire crystals and 11-inch diameter Ti:sapphire of high optical quality. Another focus of Crystal Systems' R&D efforts is the development of the Fixed Abrasive Slicing Technology (FAST) process to slice high-quality wafers at lower cost from 8-inch diameter sapphire crystals. In addition, the company is focused on adapting HEM for growth of other single crystals for important evolving markets.

The Company has a strong track record for successfully commercializing its R&D initiatives, including federally funded SBIR grants.

R&D Objectives

• Scale up HEM sapphire crystal growth to produce 25-inch diameter crystals.
• Scale up HEM Ti:sapphire crystal growth to produce 11-inch diameter crystals.
• Continually optimize sapphire and Ti:sapphire optical and mechanical properties.
• Scale up multiwire FAST for slicing up to 8-inch sapphire and silicon wafers.
• Adapt HEM and FAST for growing and slicing crystals for new markets.
• Develop refining technology to produce solar grade silicon (SoG Si) meltstock from Metallurgical Grade silicon (MG Si) to reduce silicon meltstock cost.
• Develop technology for recycling silicon powders from diverse sources such as fluidized bed fines, silicon swarf, or contaminated silicon to produce low-cost silicon meltstock.
• Develop reusable crucible.

• Growth of
  • 15-inch diameter sapphire and 8-inch diameter Ti:sapphire crystals.
  • Sapphire free of light scatter with high crystal quality.
  • Ti:sapphire with High FOM for laser applications.
  • VUV sapphire with low absorption in the 200 mm absorption band.
• FAST slicing of 6" diameter sapphire wafers with high wafer accuracy and low damage at low cost.
• Determination of the high temperature failure mechanism of sapphire and improved its high temperature strength.
• Adaptation of HEM for growth of other high technology crystals, gallium arsenide, cobalt-doped magnesium fluoride, barium fluoride and multicrystalline silicon.
• Adaptation of HEM for multicrystalline growth of silicon for solar energy.
• Development of a unique refining technology to produce solar silicon meltstock at reduced cost.
• Development of patented bottom-loading furnace for Gradient Controlled Crystallization (GCC) for growth of high-quality silicon ingots.